• High Vacuum Plasma-enhanced Chemical Vapor Deposition System (PECVD)
  • High Vacuum Plasma-enhanced Chemical Vapor Deposition System (PECVD)
  • High Vacuum Plasma-enhanced Chemical Vapor Deposition System (PECVD)

High Vacuum Plasma-enhanced Chemical Vapor Deposition System (PECVD)

Brand Shenyang Kejing

Product origin Shenyang, China

Delivery time 22 working days

Supply capacity 50 sets

Parallel-plate Capacitive PECVD is a technology that uses plasma to activate reactive gases to promote chemical reactions on the substrate surface or near-surface space to form solid-state films. The basic principle of plasma chemical vapor deposition technology is that under the action of high frequency or DC electric field, the source gas is ionized to form plasma, and the low temperature plasma is used as the energy source, an appropriate amount of reactive gas is introduced, and the plasma discharge is used to activate the reactive gas and forms chemical vapor deposition.

High Vacuum Plasma-enhanced Chemical Vapor Deposition System (PECVD)

Main Features

1. The system adopts a single-tube structure and manual front door.

2. Deposition of thin films in a high vacuum environment

3. Stainless steel chamber

4. Rotatable sample stage



Technical Parameters

Product Name

Parallel-plate Capacitive PECVD

Installation Conditions

1. Ambient temperature: 10℃~35℃

2. Relative humidity: no more than 75%

3. Power supply: 220V, single-phase, 50±0.5Hz

4. Equipment power: less than 4kW

5. Water supply: water pressure of 0.2MPa~0.4MPa, water temperature of 15℃~25℃

6. The surrounding environment of the equipment should be tidy, the air should be clean, and there should be no dust or gas that can cause corrosion on electric appliance or other metal surface or cause conduction between metals.

Major Parameters

(Specification)

1. The system adopts a single-tube structure and manual front door.

2. The vacuum chamber components and accessories are all made of high-quality stainless steel (304), argon arc welding, and the surface is treated with glass blasting and electrochemical polishing and passivating. It is equipped with a visual observation window and a baffle/shutter. The size of the vacuum chamber is Φ300mm×300mm.

3. Limit of vacuum degree: 8.0×10-5Pa

(After baking and degassing, use 600L/S molecular pump to pump air, and use 4L/S for the front stage);

Leak rate of system vacuum leak detection: ≤5.0×10-7Pa.L/S;

The system starts to pump air from the atmosphere to 8.0×10-4Pa, which can be reached in 40 minutes; the vacuum degree after the pump is stopped for 12 hours: ≤20 Pa

4. Capacitive coupling method with sample at the bottom and sprinkler on the top;

5. The maximum heating temperature of sample: 500℃, temperature control accuracy: ±1℃, and the temperature control meter is used for temperature control.

6. Size of sprinkler head: Φ90mm, electrode spacing between sprinkler head and sample is continuously adjustable online between 15 and 50mm (can be adjusted according to process requirement), with a scale index display

7. Deposition working vacuum: 13.3-133Pa (can be adjusted according to the process requirement)

8. RF power supply: frequency 13.56MHz, maximum power 300W automatic matching

9. Gas type (provided by users), the standard configuration is 2-channel 100sccm quality controller, users can change the gas circuit configuration according to the process requirement.

10. System exhaust gas treatment system ( provided by users)

Film Coater



Warranty

    One year limited with lifetime support (not including rusted parts due to inadequate storage conditions)



Logistics

PECVD system


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